TITLE

Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability

AUTHOR(S)
Fischetti, M. V.; Laux, S. E.
PUB. DATE
January 2001
SOURCE
Journal of Applied Physics;1/15/2001, Vol. 89 Issue 2, p1205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In the ever smaller silicon metal-oxide-semiconductor field-effect transistors of the present technology, electrons in the conductive channel are subject to increasingly stronger long-range Coulomb interactions with high-density electron gases present in the source, drain, and gate regions. We first discuss how two-dimensional, self-consistent full-band Monte Carlo/Poisson simulations can be tailored to reproduce correctly the semiclassical behavior of a high-density electron gas. We then employ these simulations to show that for devices with channel lengths shorter than about 40 nm and oxides thinner than about 2.5 nm, the long-range Coulomb interactions cause a significant reduction of the electron velocity, and so a degradation of the performance of the devices. In addition, the strong "thermalization" of the hot-electron energy distribution induced by Coulomb interactions has an effect on the expected reliability of the transistors. © 2001 American Institute of Physics.
ACCESSION #
4713020

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics