Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.
December 2000
Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567
Academic Journal
We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model. © 2000 American Institute of Physics.


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