TITLE

Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

AUTHOR(S)
Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.
PUB. DATE
December 2000
SOURCE
Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model. © 2000 American Institute of Physics.
ACCESSION #
4711643

 

Related Articles

  • Phonon plasmon interaction in ternary group-III-nitrides. Kirste, Ronny; Mohn, Stefan; Wagner, Markus R.; Reparaz, Juan S.; Hoffmann, Axel // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p041909 

    Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration....

  • Observation of plasmons coupled with optical phonons in n-AlxGa1-xAs by Raman scattering. Yuasa, T.; Naritsuka, S.; Mannoh, M.; Shinozaki, K.; Yamanaka, K.; Nomura, Y.; Mihara, M.; Ishii, M. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p176 

    Raman scattering from Si-doped n-AlxGa1-xAs (x=0.25) grown by molecular beam epitaxy has been studied at room temperature. In addition to the optical phonon lines, three new Raman lines have been clearly observed in samples with high carrier concentrations (n>=1×1018 cm-3). These lines are...

  • Raman scattering from phonon-plasmon modes in Ga1-xAlxAs. Becker, R. J.; Luehrmann, P. F.; Langer, D. W. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p513 

    The relation for the frequencies of phonon-plasmon modes in two-component solutions is presented. Raman spectra from over 80 samples of Ga1-xAlxAs over a wide range of x values and varying electron concentrations have been fitted to predicted curves using this relationship. Data were taken at...

  • Phonon�Plasmon Interaction in Tunneling GaAs/AlAs Superlattices. Volodin, V. A.; Efremov, M. D.; Preobrazhenskii, V. V.; Semyagin, B. R.; Bolotov, V. V.; Sachkov, V. A.; Galaktionov, E. A.; Kretinin, A. V. // JETP Letters;6/10/2000, Vol. 71 Issue 11, p477 

    The phonon�plasmon interaction in tunneling GaAs[sub n]/AlAs[sub m] superlattices (m = 5 and 6=n=0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the...

  • Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs. Wang, P. D.; Foad, M. A.; Sotomayor-Torres, C. M.; Thoms, S.; Watt, M.; Cheung, R.; Wilkinson, C. D. W.; Beaumont, S. P. // Journal of Applied Physics;4/15/1992, Vol. 71 Issue 8, p3754 

    Reports on Raman investigations of the coupled longitudinal optical phonon-plasmon scattering on heavily doped n[sup+]-GaAs. Background to the study; Theoretical considerations; Details of the dry etching and experimental technique; Results and discussion.

  • Raman scattering by coupled plasmon-phonon modes in n-type Ga1-xAlxAs epitaxial layers. Kirillov, D.; Chai, Y.; Webb, C.; Davis, G. // Journal of Applied Physics;1/1/1986, Vol. 59 Issue 1, p231 

    Presents a study which examined Raman scattering by coupled plasmon-phonon modes in galium[sub0.75]aluminum[sub0.25]arsenic epitaxial layers grown by molecular beam epitaxy and metalorganic vapor deposition. Examination of the dependence of plasmon-phonon frequency on the concentration of free...

  • Raman scattering study of carrier activation in zinc- and silicon-implanted and pulse-laser-annealed GaAs. Ashokan, R.; Jain, K. P. // Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2209 

    Reports the plasmon-LO-phonon coupled modes observed in the Raman spectra of carrier activation in zinc and silicon-implanted and pulse-laser-annealed gallium arsenide. Interaction between LO phonon and free carriers; Wavelength dependence of the threshold power density for the best carrier...

  • Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals. Nakashima, S.; Harima, H.; Ohtani, N.; Katsuno, M. // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3547 

    Raman microspectroscopy has been applied to the determination of free carrier distributions in modulation-doped 6H-SiC crystals in order to examine the process of the crystal growth. The spatial distribution of the carrier concentration and mobility is extracted from the line shape analysis of...

  • Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure. Lin, Y. C.; Chiu, C. H.; Fan, W. C.; Chia, C. H.; Yang, S. L.; Chuu, D. S.; Lee, M. C.; Chen, W. K.; Chang, W. H.; Chou, W. C. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 12, p123510 

    The vibrational, electronic, and crystalline properties of n-type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2×1015 to 1.8×1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics