TITLE

Metal-insulator transition temperature dependence on lead and oxygen content in La[sub 1-x]Pb[sub x]MnO[sub 3±y] thin films

AUTHOR(S)
Yamada, Y.; Kusumori, T.; Muto, H.
PUB. DATE
December 2000
SOURCE
Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6678
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Preparation of the manganese oxide films with high Curie temperature (T[sub C]) above room temperature (RT) is essential for developing multilayered devices that work at RT. We have fabricated La[sub 1-x]Pb[sub x]MnO[sub 3±y] (LPMO) thin films on LaAlO[sub 3]-Sr[sub 2]AlTaO[sub 6] (001) single-crystal substrates using a pulsed-laser ablation deposition method. Their metal-insulator transition temperature (T[sub R][sup max]), which nearly equals T[sub C], is investigated as a function of the lead (Pb) and oxygen contents contained. The results in the following were obtained. X-ray diffraction indicates growth of epitaxial films with (001) orientation. Samples with high T[sub R][sup max]∼370 K can be prepared in deposition conditions with a substrate temperature (T[sub S]) of 600 °C and an oxygen pressure (P[sub O]) not less than 0.4 Torr. The T[sub R][sup max] decreases with increasing T[sub S] or decreasing P[sub O]. The former decrease in the T[sub R][sup max] is shown by electron-probe microanalysis to be ascribed to evaporation of Pb from the films at high T[sub S]. On the other hand, it is inferred that the latter decrease is due to a reduction in oxygen content in the films. The reduction of Pb and oxygen contents in the LPMO films, respectively, leads to a decrease in the number of conduction electrons and, consequently, results in a T[sub R][sup max] decrease of the films. © 2000 American Institute of Physics.
ACCESSION #
4711622

 

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