Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C

Karim, Adil; Abraham, Patrick; Lofgreen, Daniel; Chiu, Yi-Jen; Piprek, Joachim; Bowers, John
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2632
Academic Journal
We report 105 °C continuous-wave, electrically pumped operation of a 1526 nm vertical-cavity surface-emitting laser. An InP/InGaAsP active region was wafer bonded to GaAs/AlGaAs mirrors, with a superlattice barrier to reduce the number of nonradiative recombination centers in the bonded active region. © 2001 American Institute of Physics.


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