Direct observation of a critical length effect in dual-damascene Cu/oxide interconnects

Ogawa, Ennis T.; Bierwag, Alexander J.; Lee, Ki-Don; Matsuhashi, Hideki; Justison, Patrick R.; Ramamurthi, Anup N.; Ho, Paul S.; Blaschke, Volker A.; Griffiths, David; Nelsen, Anne; Breen, Mark; Havemann, Robert H.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2652
Academic Journal
Electromigration results have provided clear evidence of a short or "Blech" length effect in dual- damascene, Cu/oxide, multilinked interconnects. The test structure incorporates a repeated chain of Blech-type line elements and is amenable to failure analysis tools such as focused ion beam imaging. This large interconnect ensemble provides a statistical representation of electromigrationinduced damage in the regime where steady-state interconnect stress is manifest. Statistical analysis yields a critical length of 90 μm for interconnects with line width 0.5 μm at j=1.0x10[sup 6] A/cm[sup 2] and T=325 °C. © 2001 American Institute of Physics.


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