TITLE

Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon

AUTHOR(S)
Stritzker, B.; Petravic, M.; Wong-Leung, J.; Williams, J. S.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2682
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing both vacancy- and interstitial-type defects is more complex, with Fe accumulation at all regions in the sample which contain defects, whether they are vacancy- or interstitial-like in character. © 2001 American Institute of Physics.
ACCESSION #
4711351

 

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