Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon

Stritzker, B.; Petravic, M.; Wong-Leung, J.; Williams, J. S.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2682
Academic Journal
The selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing both vacancy- and interstitial-type defects is more complex, with Fe accumulation at all regions in the sample which contain defects, whether they are vacancy- or interstitial-like in character. © 2001 American Institute of Physics.


Related Articles

  • Transient ion drift detection of low level copper contamination in silicon. Heiser, T.; McHugo, S. // Applied Physics Letters;6/30/1997, Vol. 70 Issue 26, p3576 

    Measures quenched interstitial copper concentrations in copper plated and copper implanted silicon using transient ion drift method. Importance of copper for metallic interconnections in ultralarge scale integrated devices; Impact of contamination by metallic impurities on device properties;...

  • Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si. Singh, Ranbir; Fonash, S. J.; Rohatgi, A. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p800 

    The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only...

  • Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon. Hu, S. M. // Journal of Applied Physics;5/15/1985, Vol. 57 Issue 10, p4527 

    Investigates kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon. Kinetics of interstitial supersaturation under linear and linear-parabolic oxidation; Interstitial transients in presence of bulk...

  • Electronic properties of multiple Si δ doping in GaAs. Degani, Marcos H. // Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4362 

    Focuses on a study which detailed the calculation of the subband structure of multiple silicon 8-doped layers in GaAs within the local-density-functional approximation for several doping periods. Diffusion effect of donors impurities; Methods used to study the electron energy levels formed in...

  • Nonlinear piezoresistance effects in silicon. Matsuda, Kazunori; Suzuki, Katuhisa; Yamamura, Kazuhisa; Kanda, Yozo // Journal of Applied Physics;2/15/1993, Vol. 73 Issue 4, p1838 

    Discusses a study which detailed the measurement of the nonlinearity of the piezoresistance (PR) effects in p- and n-type silicon for three surface impurity concentrations and for three crystallographic orientations. Factor that added to the importance of a detailed piezoresistance study;...

  • Dislocation-accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by metalorganic chemical vapor deposition. Kim, Yong; Kim, Moo Sung; Min, Suk-Ki; Lee, Choochon // Journal of Applied Physics;2/1/1991, Vol. 69 Issue 3, p1355 

    Analyzes the dislocation-accelerated diffusion of silicon impurities initially confined in the delta-doped sheets. Details on the experiment; Results of the study; Conclusions.

  • Silicon contamination of diamond films deposited on silicon substrates in fused silica based reactors. Borges, C. F. M.; Schelz, S.; St.-Onge, L.; Moisan, M.; Martinu, L. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3290 

    Focuses on a study which investigated the level and origin of silicon impurity in diamond films deposited in silicon substrates under various operating conditions. Background to the study; Experimental details; Results and concentration.

  • Effect of an organic polymer in purification and cutting of single-wall carbon nanotubes. Yudasaka, M.; Zhang, M.; Jabs, C.; Iijima, S. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 4, p449 

    Abstract. A mixture of as-grown single-wall carbon nanotubes (SWNTs) and a monochlorobenzene (MCB) solution of polymethylmethacrylate (PMMA) was sonicated and homogenized. As a result, SWNTs were separated from carbonaceous impurities and metal particles, which enabled us to purify the SWNTs by...

  • Impurity gettering to secondary defects created by MeV ion implantation in silicon. Brown, R.A.; Rozgonyi, G.A.; Kononchuk, O.; Koveshnikov, S.; Knights, A.P.; Simpson, P.J.; Gonzalez, F. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2459 

    Presents a study of impurities in MeV ion implanted silicon. Temperature dependence of the impurity trapping; Information relating to the trapping of iron, nickel and copper at extrinsic dislocations; Effects of intrinsic oxygen on the trapping of metallic impurities.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics