Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Ramalingam, Shyam; Sriraman, Saravanapriyan; Aydil, Eray S.; Maroudas, Dimitrios
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2685
Academic Journal
The relationship between the structure, H coverage, morphology, and reactivity of plasma deposited hydrogenated amorphous silicon (a-Si:H) film surfaces was investigated using molecular-dynamics simulations. Surfaces of a-Si:H films grown with SiH[sub 3] as the sole deposition precursor are found to be remarkably smooth due to a valley-filling mechanism where mobile precursors, such as SiH[sub 3] and Si[sub 2]H[sub 6], diffuse and react with dangling bonds in the valleys on the surface. Surface valleys are reactive due to the increased concentration of dangling bonds and decreased H coverage in these regions. The previously speculated physisorbed configuration, where SiH[sub 3] is weakly bound to the surface through a H atom, is highly unlikely to be the mobile precursor state. © 2001 American Institute of Physics.


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