Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Cherns, D.; Henley, S. J.; Ponce, F. A.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2691
Academic Journal
Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of In[sub x]Ga[sub 1-x]N quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed. © 2001 American Institute of Physics.


Related Articles

  • Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures. Pavelescu, E.-M.; Peng, C. S.; Jouhti, T.; Konttinen, J.; Li, W.; Pessa, M.; Dumitrescu, M.; Spa⁁nulescu, S. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3054 

    We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of a strain-mediating GaInNAs layer grown between a compressive-strained quantum well and a tensile-strained GaNAs layer. Compared to a similar sample with no strain-mediating layer, this heterostructure exhibits...

  • Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning... Kemerink, M.; Gerritsen, J. W. // Applied Physics Letters;12/6/1999, Vol. 75 Issue 23, p3656 

    Studies spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope. Passivation of the sample surface with sulfur; Dependence of the luminescence signal on tunneling current and voltage.

  • Optical determination of the heavy-hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well. Lee, Hosun; Jones, E. D.; Kurtz, S. R.; Schmiedel, T.; Houghton, D. C.; Lee, K.-S. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6327 

    Focuses on a study which measured the diamagnetic shift of band-edge luminescence, no-phonon peak and phonon sideband from undoped silicon[sub0.83] germanium[sub0.17]/silicon quantum well using magnetoluminescence spectroscopy. Features of zero field; Variational method of estimating the...

  • Radiative recombination in near-surface strained Si[sub 1-x]Ge[sub x]Si quantum wells. Fukatsu, S.; Akiyama, H. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3602 

    Examines the effect of the surface on the radiative recombination in near surface (NS) strained Si[sub 1-x]Ge[sub x]/Si quantum wells (QW). Factor decreasing the luminescence intensity of NSQW; Disclosure of a saturable behavior with increasing excitation density by the diminution; Revelation...

  • InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy. Perlin, Piotr; Kisielowski, Christian; Iota, Valentin; Weinstein, B. A.; Mattos, Laila; Shapiro, Noad A.; Kruger, Joachim; Weber, Eicke R.; Yang, Jinwei // Applied Physics Letters;11/9/1998, Vol. 73 Issue 19 

    The energies of photo- and electroluminescence transitions in In[sub x]Ga[sub 1-x]N quantum wells exhibit a characteristic “blueshift” with increasing pumping power. This effect has been attributed either to band-tail filling, or to screening of piezoelectric fields. We have studied...

  • Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. Tomasini, P.; Arai, K.; Lu, F.; Zhu, Z. Q.; Sekiguchi, T.; Suezawa, M.; Yao, T.; Shen, M.Y.; Goto, T.; Yasuda, T.; Segawa, Y. // Journal of Applied Physics;4/15/1998, Vol. 83 Issue 8, p4272 

    Provides information on an experimental study reporting on the orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. Methodology used to conduct the experiment; Results of the experiment; Information on optical characterizations; Discussion on the results.

  • Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time-resolved luminescence. Capizzi, M.; Coluzza, C.; Frova, A.; Cebulla, U.; Forchel, A. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p772 

    Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in...

  • Correlation of time-resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier widths. Krahl, M.; Kirstaedter, N.; Bauer, R. K.; Bimberg, D.; Meier, H. P.; Harder, C. // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5561 

    Presents results of a comparative study of the time-dependent luminescence properties of multiple quantum well structures. Investigation of the carrier kinetics by different experimental approaches such as cathodoluminescence; Comparison of the superiority of quantum well lasers and...

  • Resonant exciton effects in InAs monolayer insertions in a GaAs matrix. Wang, P. D.; Ledentsov, N. N.; Torres, C. M. Sotomayor; Zhukov, A. E.; Kop’ev, P. S.; Ustinov, V. M. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7164 

    Provides information on a study that examined resonant luminescence in ultrathin InAs quantum-well structures. Sample growth and characterization; Results and discussion on the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics