Effect of the density of collision cascades on implantation damage in GaN

Kucheyev, S. O.; Williams, J. S.; Titov, A. I.; Li, G.; Jagadish, C.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2694
Academic Journal
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi[sub 1] and 1 MeV Bi[sub 2] ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to collective nonlinear energy spike processes. Such a strong influence of the density of collision cascades is important to take into account for a correct estimation of implantation-produced lattice disorder in GaN. © 2001 American Institute of Physics.


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