TITLE

Energy distributions of electrons emitted from GaAs(Cs, O)

AUTHOR(S)
Orlov, D. A.; Hoppe, M.; Weigel, U.; Schwalm, D.; Terekhov, A. S.; Wolf, A.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2721
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method to map out the energy distribution N(E[sub ||],E[sub ⊥]) of an electron beam as a function of the longitudinal (E[sub ||]) and transverse (E[sub ⊥]) energy has been developed and applied to study the photoemission process from GaAs(Cs, O) at 90 K. The method proceeds by "marking" electrons with fixed longitudinal energy E[sub ||][sup b] and a subsequent measurement of the associated differential transverse energy distribution N[sub ⊥](E[sub ||][sup b],E[sub ⊥]), applying an adiabatic magnetic compression technique. The complete energy distribution N(E[sub ||],E[sub ⊥]) of electrons from a GaAs(Cs, O) photocathode obtained by a stepwise variation of E[sub ||][sup b] provides details about the transfer of electrons through the GaAs(Cs, O)-vacuum interface and demonstrates that not only electron energy loss, but also elastic electron scattering is of crucial importance in the escape process. © 2001 American Institute of Physics.
ACCESSION #
4711338

 

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