Energy distributions of electrons emitted from GaAs(Cs, O)

Orlov, D. A.; Hoppe, M.; Weigel, U.; Schwalm, D.; Terekhov, A. S.; Wolf, A.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2721
Academic Journal
A method to map out the energy distribution N(E[sub ||],E[sub ⊥]) of an electron beam as a function of the longitudinal (E[sub ||]) and transverse (E[sub ⊥]) energy has been developed and applied to study the photoemission process from GaAs(Cs, O) at 90 K. The method proceeds by "marking" electrons with fixed longitudinal energy E[sub ||][sup b] and a subsequent measurement of the associated differential transverse energy distribution N[sub ⊥](E[sub ||][sup b],E[sub ⊥]), applying an adiabatic magnetic compression technique. The complete energy distribution N(E[sub ||],E[sub ⊥]) of electrons from a GaAs(Cs, O) photocathode obtained by a stepwise variation of E[sub ||][sup b] provides details about the transfer of electrons through the GaAs(Cs, O)-vacuum interface and demonstrates that not only electron energy loss, but also elastic electron scattering is of crucial importance in the escape process. © 2001 American Institute of Physics.


Related Articles

  • Photoemission oscillations during epitaxial growth. Eckstein, J. N.; Webb, C.; Weng, S.-L.; Bertness, K. A. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1833 

    We report the use of in situ, near-threshold photoemission to study the dynamics of GaAs surfaces during epitaxial crystal growth and, in particular, the observation of oscillations in the photoemitted current. These oscillations are found to depend upon the growth rate in the same manner as do...

  • Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures. Subashiev, A. V.; Mamaev, Yu. A.; Oskotskii, B. D.; Yashin, Yu. P.; Kalevich, V. K. // Semiconductors;Nov99, Vol. 33 Issue 11, p1182 

    The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra are shown to be described well by a model...

  • Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature. Khan, M. Asif; Krishnankutty, S. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p520 

    Examines the production of vertical cavity stimulated emission from photopumped indium gallium arsenide (InGaN)/GaN heterojunctions at room temperature. Deposition of InGaN/GaN heterojunction over sapphire substrates; Use of cross-section transmission electron spectroscopy to establish the...

  • Refractive switch for two-dimensional electrons. Spector, J.; Stormer, H. L.; Baldwin, K. W.; Pfeiffer, L. N.; West, K. W. // Applied Physics Letters;6/11/1990, Vol. 56 Issue 24, p2433 

    A refractive electrostatic prism is used to switch a beam of ballistic electrons between different collectors in the two-dimensional electron gas of an AlGaAs-GaAs heterostructure. This represents a new concept in electronic switching which utilizes the electrostatically controlled refraction of...

  • High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen. TOMKIEWICZ, PAWEL; KOSCIELNIAK, PIOTR; GIRYCKI, ADAM; SZUBER, JACEK // Optica Applicata;2005, Vol. 35 Issue 3, p385 

    High-resolution photoemission yield spectroscopy (PYS) has been used to study the electronic properties of space charge layer of the real GaAs(100) surface cleaned by atomic hydrogen. The ionization energy, work function and interface Fermi level position were determined as a function of...

  • Internal photoemission and band discontinuities at Ga0.47In0.53As-InP heterojunctions. Haase, M. A.; Pan, N.; Stillman, G. E. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1457 

    Internal photoemission has been observed in the spectral response of specially designed Ga0.47In0.53As-InP p+N- heterojunction photodiodes. Power-law fits to the internal photoemission as a function of photon energy allow precise determination of threshold energies from which the conduction-band...

  • Fermi level movement at the Cs/GaAs (110) interfaces. Cao, Renyu; Miyano, Ken; Kendelewicz, Tom; Lindau, Ingolf; Spicer, William E. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1250 

    Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low-temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p-type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef...

  • Electron beam irradiation enhancement of Al-Ga interdiffusion at GaAs/AlGaAs quantum well interfaces. Li, Y. J.; Tsuchiya, M.; Petroff, P. M. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p472 

    The effect of room-temperature electron beam irradiation on the Al-Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low-temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV...

  • Optical modes in pyramidal GaAs microcavities. Weber, F. M.; Karl, M.; Lupaca-Schomber, J.; Löffler, W.; Li, S.; Passow, T.; Hawecker, J.; Gerthsen, D.; Kalt, H.; Hetterich, M. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p161104 

    Pyramidal GaAs structures on top of GaAs/AlAs distributed Bragg reflectors are investigated as candidates for true three-dimensional cavities with potentially low mode volume and high quality-factor. Different types of single and coupled resonators with base lengths of a few microns are realized...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics