Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

Mitan, M. M.; Pivin, D. P.; Alford, T. L.; Mayer, J. W.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2727
Academic Journal
CoSi[sub 2] structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As[sup ++] through a cobalt (34 nm)/oxide (∼2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3x10[sup 15] cm[sup -2] was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm. © 2001 American Institute of Physics.


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