TITLE

Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

AUTHOR(S)
Mitan, M. M.; Pivin, D. P.; Alford, T. L.; Mayer, J. W.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2727
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
CoSi[sub 2] structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As[sup ++] through a cobalt (34 nm)/oxide (∼2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3x10[sup 15] cm[sup -2] was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm. © 2001 American Institute of Physics.
ACCESSION #
4711336

 

Related Articles

  • Optical properties of buried cobalt disilicide layers in silicon. Lu, F.; Perry, C. H.; Namavar, F. // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7465 

    Presents a study which measured the optical reflectivity from highly conducting buried and exposed cobalt disilicide layers produced by cobalt ion implantation of silicon substrates. Details of the as-implanted and high temperature annealed heteroepitaxial layers; Information on the frequency...

  • Drawing graphene nanoribbons on SiC by ion implantation. Tongay, S.; Lemaitre, M.; Fridmann, J.; Hebard, A. F.; Gila, B. P.; Appleton, B. R. // Applied Physics Letters;2/13/2012, Vol. 100 Issue 7, p073501 

    We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC....

  • Buried superconducting layers comprised of magnesium diboride nanocrystals formed by ion implantation. Zhai, H. Y.; Christen, H. M.; White, C. W.; Budai, J. D.; Lowndes, D. H.; Meldrum, A. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4786 

    Superconducting layers of MgB[sub 2] were formed on Si substrates using techniques that are widely used and accepted in the semiconductor industry. Mg ions were implanted into boron films deposited on Si or Al[sub 2]O[sub 3] substrates. After a thermal processing step, buried superconducting...

  • Dysprosium silicide nanowires on Si(110). Zhian He, Al. L.; Stevens, M.; Smith, David J.; Bennett, P.A. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5292 

    Dysprosium deposited on Si(110) at 720 °C is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section...

  • In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110). Okino, Hiroyuki; Matsuda, Iwao; Hobara, Rei; Hosomura, Yoshikazu; Hasegawa, Shuji; Bennett, P. A. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p233108 

    We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs...

  • Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC... Schmid, U.; Getto, R. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2681 

    Presents information on a study which investigated the electrical characteristics of titanium silicide ohmic contacts to nitrogen implanted 6H-silicon carbide using linear transmission line method structures. Measurement techniques; Device fabrication; Experimental results and discussion;...

  • Dose-dependent precipitate evolution arising during implantation of Er into Si. Hogg, S. M.; Pipeleers, B.; Vantomme, A.; Bender, H.; Richard, O.; Swart, M. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p083514 

    Implant dose effects arising from the implantation of 166Er+ into Si(111) have been investigated. This study encompasses a wide dose range from 4×1015 to 1.2×1017 at. cm-2 and focuses on channeled implantation as random implantation leads to a high degree of self-sputtering and damage in...

  • Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. Milinovic, V.; Bibic, N.; Dhar, S.; Siljegovic, M.; Schaaf, P.; Lieb, K.P. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 8, p2093 

    In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV14N2+ ion implantation in57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy,...

  • Formation and application of metal nanoclusters in SiC. Zimmerman, Robert L.; Ila, D.; Muntele, C.; Muntele, I.; Evelyn, A. L.; Hensley, D. H.; Poker, D. B. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p1020 

    Using high dose and energy ion implantation, followed by thermal annealing, we have formed nanoclusters of various ion species in Si-face 6H-SiC. The implantation of ions into any semiconductor material followed by thermal annealing leads to a change of the electrical and optical properties at...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics