Structure and formation mechanism of the E[sub α][sup ′] center in amorphous SiO[sub 2]

Uchino, T.; Takahashi, M.; Yoko, T.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2730
Academic Journal
We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, E[sub α][sup ′], which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two different types of paramagnetic centers that are consistent with the experimental spectral features for E[sub α][sup ′]. The highly anisotropic symmetry and the isotropic hyperfine coupling constants observed for one of the E[sub α][sup ′]- center variants are reproduced by the present model. © 2001 American Institute of Physics.


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