TITLE

Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development

AUTHOR(S)
Yasin, Shazia; Hasko, D. G.; Ahmed, H.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2760
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the fabrication of 3-4 nm wide continuous lines in a positive tone electron beam resist poly(methylmethacrylate) on a solid substrate. This narrow linewidth was made possible through the use of a nonsolvent-based developer system, water:isopropyl alcohol, together with ultrasonically-assisted development, which reduced the effective development time thus limiting the swelling of the unexposed resist. This combination of solvent system and development technique results in a smaller radius of gyration in the developing polymer molecules and in a wider exposure dose latitude compared to conventional processing and so allows ultrasmall features to be reproduced. © 2001 American Institute of Physics.
ACCESSION #
4711324

 

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