Scanning tunneling microscope-induced modification of Ag films and nanowire arrays on Cu(100) surfaces

York, S. M.; Leibsle, F. M.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2763
Academic Journal
We demonstrate the ability to use scanning tunneling microscopy to create nanometer-scale pits on Ag films grown on Cu(100) substrates. Atomic resolution images show that the Ag structures are intact within these pits. We also demonstrate how we can selectively modify segments of Ag nanowire arrays grown on atomic nitrogen modified Cu(100) surfaces. © 2001 American Institute of Physics.


Related Articles

  • Small mesas and holes in split-gate quantum wires acting as ‘‘artificial impurities’’ fabricated with scanning tunneling microscope. Yamada, Syoji; Yamamoto, Masafumi // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8391 

    Presents information on a study that discussed the fabrication of artificial impurities such as small mesas and holes with a scanning tunneling microscope (STM) in split-gate quantum wires and their transport properties. STM fabrication of small structures; Experimental results on transport...

  • Scanning tunneling microscopic study of boron-doped silicon nanowires. Ma, D. D. D.; Lee, C. S.; Lee, S. T. // Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2468 

    Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular...

  • Nanometer-scale recording on an organic-complex thin film with a scanning tunneling microscope. Ma, L. P.; Song, Y. L.; Gao, H. J.; Zhao, W. B.; Chen, H. Y.; Xue, Z. Q.; Pang, S. J. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3752 

    Nanometer-scale recording on an organic-complex thin film with a scanning tunneling microscope (STM) under ambient conditions is demonstrated. The recording marks are made by applying external voltage pulses between the tip and the highly ordered pyrolytic graphite substrate. A 30×30 nm2 STM...

  • Scanning tunneling microscopy on rough surfaces: Tip-shape-limited resolution. Reiss, G.; Vancea, J.; Wittmann, H.; Zweck, J.; Hoffmann, H. // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1156 

    Presents a study that discussed the reliability of scanning tunneling microscopy (STM) images of rough surfaces of polycrystalline thin films. Details of the etching procedure; Estimation of the tip shape of the rough surfaces; Comparison of the images from STM and transmission electron microscopy.

  • Strain field imaging on Si/SiGe(001)-(2×1) surfaces by low-energy electron microscopy and scanning tunneling microscopy. Jones, D. E.; Pelz, J. P.; Hong, Y.; Tsong, I. S. T.; Xie, Y.-H.; Silverman, P. J. // Applied Physics Letters;11/18/1996, Vol. 69 Issue 21, p3245 

    We show that ultrahigh-vacuum low-energy electron microscopy and scanning tunneling microscopy can be used to image residual uniaxial strain fields on (001) surfaces of SiGe heterostructures. We find that the surface crosshatch morphology on these films is highly correlated with large spatial...

  • Comparison of scanning probe microscopies with RBS and SEM/EDX for the analysis of RuO[sub 2] , TiO[sub 2] composites. Vallet, H.C. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 4/5, p387 

    Scanning tunneling microscopy (STM) was used in the constant height mode for analyzing the local composition of (RuO[sub 2] , TiO[sub 2] ) mixed oxide thin films. A digital processing of the images leads to a bipolar distribution of values of current that reflects the difference in conductivity...

  • Direct observation of a local structural transition for molecular recording with scanning tunneling microscopy. Shi, D. X.; Shi, D.X.; Song, Y. L.; Song, Y.L.; Zhang, H. X.; Zhang, H.X.; Jiang, P.; He, S. T.; He, S.T.; Xie, S. S.; Xie, S.S.; Pang, S. J.; Pang, S.J.; Gao, H.-J. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    We present a direct observation of a structural transition at molecular scale in an organic p-nitrobenzonitrile (PNBN) thin film using scanning tunneling microscopy (STM). STM images clearly show an ordered molecular structure of unrecorded regions in the films, while the PNBN molecular...

  • Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires. Sahaf, H.; Masson, L.; Léandri, C.; Aufray, B.; Le Lay, G.; Ronci, F. // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p263110 

    Upon submonolayer deposition of silicon onto the anisotropic silver (110) surface flat lying individual Si nanowires, all oriented along the [-110] direction, can be grown at room temperature with a high aspect ratio. Upon deposition at ∼200 °C, these one-dimensional nanostructures...

  • Observing 'quantized' conductance steps in silver sulfide: Two parallel resistive switching mechanisms. Wagenaar, Jelmer J. T.; Morales-Masis, Monica; van Ruitenbeek, Jan M. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 1, p014302 

    We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag2S thin film deposited on a wide Ag bottom electrode, which was contacted by the Pt tip of a scanning tunneling microscope....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics