Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Adivarahan, V.; Lunev, A.; Khan, M. Asif; Yang, J.; Simin, G.; Shur, M. S.; Gaska, R.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2781
Academic Journal
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to p GaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1x10[sup -6] Ω cm[sup 2] and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag, Au, and p GaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffraction analysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor. © 2001 American Institute of Physics.


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