High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al[sub 0.3]Ga[sub 0.7]As blocking layer

Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2784
Academic Journal
Ten-stacked InAs/GaAs quantum-dot infrared photodetectors with single Al[sub 0.3]Ga[sub 0.7]As blocking layers at either side of the stacked dots are investigated. With peak responsivity 214 mA/W and specific detectivity 1.17x10[sup 10] cm Hz[sup 1/2]/W at 6 μm, quantum-dot infrared photodetectors with single-sided blocking layers are superior in responsivity with compatible detectivity as compared to those without blocking layers. Enhancement of the photoelectron avalanche process and the absence of negative differential conductance are observed. The devices exhibit two different infrared absorption regions at 2-6 and 6-10 μm, which indicates a wide detection window of the device. © 2001 American Institute of Physics.


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