Ultraviolet photoconductive detector based on epitaxial Mg[sub 0.34]Zn[sub 0.66]O thin films

Yang, W.; Vispute, R. D.; Choopun, S.; Sharma, R. P.; Venkatesan, T.; Shen, H.
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2787
Academic Journal
We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on Mg[sub x]Zn[sub 1-x]O. Using pulsed laser deposition technique, Mg[sub 0.34]Zn[sub 0.66]O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg[sub 0.34]Zn[sub 0.66]O films, planar geometry photconductive type metal-semiconductor-metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%-90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.


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