Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Avellan, Alejandro; Krautschneider, Wolfgang; Schwantes, Stefan
April 2001
Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2790
Academic Journal
Parallel measurements of random telegraph signals (RTS) in the gate and drain currents of n-metal-oxide-semiconductor field-effect transistors with 1.3-nm-thin gate oxides are presented. RTS appear simultaneously in both currents. Contrary to what could be expected, the signals have opposite signs in the gate and drain currents. A model is proposed to explain this phenomenon by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current. Therefore, the gate current is a much more sensitive indicator for RTS than the drain current. © 2001 American Institute of Physics.


Related Articles

  • Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface. Ohata, Akiko; Toriumi, Akira; Iwase, Masao; Natori, Kenji // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p200 

    Focuses on a study which examined random telegraph signals (RTS) in small size metal-oxide-semiconductor field-effect transistors (MOSFET) from both viewpoints of relative current change and correlated switching. Discussion on RTS and MOSTEF; Methodology of the study; Results and discussion.

  • Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures. Scofield, John H.; Borland, Nick; Fleetwood, D. M.; Fleetwood, D.M. // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 μmx1.25 μm, enhancement-mode p-channel metal-oxide-semiconductor transistors operated in strong inversion in their linear regimes with constant drain-current and gate-voltage bias, for...

  • Random Telegraph Signal In Si n-MOSFETs: A Way Towards Single Spin Resonance Detection. Fanciulli, Marco; Prati, Enrico; Ferrari, Giorgio; Sampietro, Marco // AIP Conference Proceedings;2005, Vol. 800 Issue 1, p125 

    Single spin detection is one of the most challenging tasks towards the realization of a solid-state-based quantum information processor. Spin-dependent (SD) processes in the random telegraph signal (RTS) observed in silicon MOSFETs may lead to quantum bit read-out. In addition, if successful,...

  • Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-... Godoy, A.; Gamiz, F.; Palma, A.; Jiménez-Tejada, J. A.; Banqueri, J.; López-Villanueva, J. A. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4621 

    Examines the amplitude of random telegraph signals (RTS) in an n-channel metal-oxide-semiconductor field effect transistor. Influence of trap depth in the oxide on the RTS amplitude; Contributions of the mobility and carrier fluctuations on the amplitude of discrete current switching;...

  • Random telegraph signals and 1/f noise in a silicon quantum dot. Peters, M. G.; Dijkhuis, J. I. // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1523 

    Presents information on a study which investigated the effects of random telegraph signals and 1/f noise on Coulomb oscillations in a submicron metal-oxide semiconductor field-effect transistor. Information on random telegraph signals and 1/f noise; Research design and methodology; Conclusions.

  • Suppression of Random Telegraph Signal Noise in small-area MOSFETs under switched gate and substrate bias conditions. Zanolla, Nicola; Šiprak, Domagoj; Tiebout, Marc; Baumgartner, Peter; Sangiorgi, Enrico; Fiegna, Claudio // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p201 

    In this work we focus on the impact of substrate bias on the random telegraph signal (RTS) noise in small-area MOSFETs operating under switched bias conditions. Our results clearly prove that when a MOSFET is switched between an ON- and OFF-state, the application of forward substrate bias during...

  • Random telegraph-signal noise in junctionless transistors. Nazarov, A. N.; Ferain, I.; Akhavan, N. Dehdashti; Razavi, P.; Yu, R.; Colinge, J. P. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p092111 

    Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of...

  • Microwave Induced Effects on the Random Telegraph Signal in a MOSFET. Prati, Enrico; Fanciulli, Marco; Ferrari, Giorgio; Sampietro, Marco; Fantini, Paolo // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p171 

    We study the random telegraph signal (RTS) due to defects at the Si/SiO2 interface of a MOSFET in a microwave field. We observe the change of the characteristic times of the RTS by monitoring the drain current in such device operated under microwave irradiation and the change of the...

  • Comparison of Low Frequency Noise Characteristics between Channel and Gate-Induced Drain Leakage Currents in nMOSFETs. Lee, Ju-Wan; Shin, Hyungcheol; Park, Byung-Gook; Lee, Jong-Ho // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p907 

    Low frequency noise including 1/f noise and random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current were fully characterized, and compared with those of channel current in MOSFETs. The GIDL current of sub-100 nm MOSFETs showed lower noise amplitude by ∼10 times or beyond...

  • Four-mask-step power-MOSFET process boosts throughput by 30%... Goodenough, Frank // Electronic Design;12/4/95, Vol. 43 Issue 25, p42 

    Discusses power MOSFET designers. Technical information.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics