TITLE

ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

AUTHOR(S)
Chang, J. H.; Song, J. S.; Godo, K.; Yao, T.; Shen, M. Y.; Goto, T.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p566
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A ZnCdTe/ZnTe/ZnMgSeTe quantum-well (QW) structure lattice matched to ZnTe is proposed for the light-emitting devices in the pure-green wavelength region. Thin ZnTe layers are inserted in between the ZnCdTe QW layer and ZnMgSeTe cladding layers, which improve the quality of the QW structure as demonstrated by its narrow photoluminescence line width (6.5 meV at 10 K). Optically pumped lasing at 552 nm at room temperature with a threshold optical power of 215 kW cm-2 is achieved. The present results clearly show the feasibility of ZnTe-based QW structures for the application to light-emitting devices in the pure-green wavelength region. © 2001 American Institute of Physics.
ACCESSION #
4711307

 

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