TITLE

Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices

AUTHOR(S)
Akimoto, R.; Kinpara, Y.; Akita, K.; Sasaki, F.; Kobayashi, S.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p580
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 μm, covering the 1.55 μm optical communication wavelengths within its absorption band width (∼250 nm), is achieved in the ZnSe/BeTe SLs with 4.5 ML-thick ZnSe layers. The intensity in photoinduced intersubband absorption increases sublinearly with pump intensity, reflecting the characteristic recombination processes of electron-hole pairs in a heterostructure with type-II band alignment. © 2001 American Institute of Physics.
ACCESSION #
4711302

 

Related Articles

  • Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region. Bogaart, E. W.; Nötzel, R.; Gong, Q.; Haverkort, J. E. M.; Wolter, J. H. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173109 

    The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots (QDs), emitting in the 1.55 μm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast...

  • InGaSb photodetectors using an InGaSb substrate for 2 μm applications. Refaat, Tamer F.; Abedin, M. Nurul; Bhagwat, Vinay; Bhat, Ishwara B.; Dutta, Partha S.; Singh, Upendra N. // Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p1874 

    Detectors operating at 2 μm are important for several applications including optical communication and atmospheric remote sensing. In this letter, fabrication of 2 μm photodetectors using an InGaSb substrate is reported. The ternary substrates were grown using vertical Bridgmann technique...

  • Optical components survivors rise again on network demand. Yeates, Harry // Electronics Weekly;2/4/2004, Issue 2132, p1 

    The article reports on the increase in the global demand for next generation switches, amplifiers and multiplexers in 2004, as carriers finally begin to invest in their networks. The growing demand is said to benefit optical components companies that have survived the years when their advanced...

  • Optical nonlinearity in glasses: the origin and photo-excitation effects. Tanaka, Keiji; Saitoh, Akira // Journal of Materials Science: Materials in Electronics;Oct2007 Supplement, Vol. 18, p75 

    Linear and nonlinear optical properties in oxide and chalcogenide glasses have been studied comparatively. Applying a semiconductor concept to these glasses, we show that maximal nonlinear refractive-index at optical communication wavelengths is ∼10−4 cm2/GW, which can be obtained in...

  • Testing LED Applications. LAU, MARK // Printed Circuit Design & Fab: Circuits Assembly;Apr2012, Vol. 29 Issue 4, p56 

    The article discusses reliable method that can be applied when testing light emitting diode (LED) applications. It states to save money, it is best to inspect the applications of LED during its assembly on a board. According to the author, the use of in-circuit tester can easily detect problems...

  • 60V output buck, boost, or buck-boost LED controller. Rako, Paul // EDN Europe;Aug2008, Vol. 53 Issue 8, p10 

    The article features the LT3755 light emitting diode (LED) controller by Linear Technology Corp. The controller has a 4.5 to 40 volt input-voltage range. It drives external field effect transistor (FET) to illuminate as many as 14 1 ampere white LED from a nominal 12 volts input. It also uses...

  • Electrical and photonic switching: Finding the right balance. Lipes, Lee; Rouse, James // Lightwave;Mar2002, Vol. 19 Issue 3, p170 

    Examines the substitution of electronics with photonics in optical communications. Characteristics that appear after routing traffic over express network; Advantages of a photonic layer; Suggestion for a more economical approach.

  • Epitaxial firm gets orders from returning customers. Yeates, Harry // Electronics Weekly;4/2/2003, Issue 2093, p8 

    States that IQE, an epitaxial wafer supplier based in South Wales, England, has received orders from optical communication customers that have not posted orders for several months. Expectation about the business of IQE; Operations of the company.

  • Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models. Della Corte, Francesco G.; Esposito Montefusco, Maurizio; Moretti, Luigi; Rendina, Ivo; Cocorullo, Giuseppe // Journal of Applied Physics;12/15/2000, Vol. 88 Issue 12 

    The thermo-optic coefficient (dn/dT) of crystalline silicon has been critically analyzed in the temperature range 300-600 K, at the fiber optic communication wavelength of 1.5 μm. The temperature dependence has been attributed to the variation of the interband transition energies at some...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics