Two-dimensional profiling and size effects on the transient enhanced diffusion of ultralow-energy B implants in Si

Giannazzo, Filippo; Priolo, Francesco; Raineri, Vito; Privitera, Vittorio
January 2001
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p598
Academic Journal
Two-dimensional profiles of ultralow-energy B implants in Si after diffusion have been studied in detail by scanning capacitance microscopy in connection with a double beveling technique to enhance depth and lateral resolution. Implants have been made into patterned wafers with different feature sizes ranging from 0.8 to 5 μm. It is demonstrated that the B transient enhanced diffusion is strongly reduced with decreasing feature size below about 2 μm. This effect is related to the increasing effect of interstitial lateral out-diffusion under the SiO[sub 2] mask. The implication for the formation of ultrashallow junctions in device structures is discussed. © 2001 American Institute of Physics.


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