High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

Yoo, Y.-Z.; Osaka, Y.; Fukumura, T.; Jin, Zhengwu; Kawasaki, M.; Koinuma, H.; Chikyow, T.; Ahmet, P.; Setoguchi, A.; Chichibu, S. F.
January 2001
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p616
Academic Journal
ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700 °C and all films were found to have a specific preferential orientation. With increasing T[sub s], growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700 °C. The presence of ZnS[sup +] ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV. © 2001 American Institute of Physics.


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