Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films

Shin, Jin-Koog; Lee, Churl Seung; Lee, Kwang-Ryeol; Eun, Kwang Yong
January 2001
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p631
Academic Journal
Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1±0.5 cm[sup -1]/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp[sup 2] bond content shifts the G-peak position to higher frequency. © 2001 American Institute of Physics.


Related Articles

  • Observation of sp... bonding in tetrahedral amorphous carbon using visible Raman spectroscopy. Chen[a], Z. Y.; Zhao, J. P.; Yano, T.; Ooie, T.; Yoneda, M.; Sakakibara, J. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2305 

    Characterizes the carbon bonding in tetrahedral amorphous carbon films using visible Raman spectroscopy. Revelation of the vibrational modes of the sp[sup 3] bonding in ta-C films; Observation of the occurrence of an additional Raman band; Vibrational density of the observed sp[sup 3] related...

  • Effect of substrates and film thickness on the structural, optical, and electrical properties of hydrogenated amorphous silicon films. Hishikawa, Yoshihiro; Tsuge, Sadaji; Nakamura, Noboru; Tsuda, Shinya; Nakano, Shoichi; Kuwano, Yukinori // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p771 

    Hydrogenated amorphous silicon (a-Si:H) films have been deposited on different substrates by a plasma chemical vapor deposition method. Raman spectra of the a-Si:H films are significantly dependent on the material of the substrate (glass, crystalline silicon, and stainless steel). The spectra...

  • Raman spectra of diamondlike amorphous carbon films. Yoshikawa, M.; Katagiri, G.; Ishida, H.; Ishitani, A.; Akamatsu, T. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6464 

    Presents a study which investigated Raman spectra of diamondlike amorphous carbon films. Method of the study; Results and discussion; Conclusion.

  • Low-frequency Raman scattering and structure of amorphous polymers: Stretching effect. Achibat, T.; Boukenter, A.; Duval, E.; Lorentz, G.; Etienne, S. // Journal of Chemical Physics;8/15/1991, Vol. 95 Issue 4, p2949 

    Low-frequency Raman scattering of amorphous polymers [polyethyleneterephthalate (PET) and polymethylmethacrylate] is investigated. The low-frequency Raman band called ‘‘Boson peak’’ is interpreted in terms of a noncontinuous structure, similar to that of inorganic...

  • Avoided crossings in metal (M)—gas (X) reactions (M = Hg, and X = SiH4, GeH4). Novaro, Octavio Augusto; Alba Pacheco-Blas, María del; Pacheco-Sánchez, Juan Horacio // Theoretical Chemistry Accounts: Theory, Computation, & Modeling;Jun2010, Vol. 126 Issue 3/4, p109 

    A study of nonadiabatic transitions through avoided crossings between two potential energy curves, associated to the approach of a mercury atom to an organic gas molecule (silane or germane) is presented. We study the Si–H and Ge–H bond breaking in the molecules SiH4 and GeH4,...

  • Ion-assisted deposition of amorphous GaN: Raman and optical properties. Bittar, A.; Trodahl, H. J.; Kemp, N. T.; Markwitz, A. // Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p619 

    We report the preparation of amorphous GaN by ion-assisted deposition and studies of the Raman and optical response of the resulting films. The films are transparent across the visible and show an edge whose energy and structure are in close agreement with crystalline material, suggesting a low...

  • Effects of hydrogen on structural relaxation and defect evolution in amorphous silicon. Hiroyama, Y.; Motooka, T. // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3126 

    Examines the hydrogenation effects of the structural relaxation and defect evolution on amorphous silicon (a-Si). Investigation by ion implantation and evaporation using Raman scattering spectroscopy and positron lifetime measurements; Reduction of the bond angle deviation of a-Si due to...

  • Raman scattering characterization of amorphous carbon from photothermal oxidation of fullerite. Manfredini, M.; Bottani, C. E.; Milani, P. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p5945 

    Focuses on a study which conducted a Raman scattering characterization of amorphous carbon from photothermal oxidation of fullerite. Fabrication of the study sample; Time evolution of fullerite single-crystal Raman spectra; Evolution of the fit parameters with power density.

  • Rotational spectrum of a quantum rotor adsorbed on a rough and disordered surface: Para-H2 and ortho-H2 on amorphous ice. Buch, V.; Silva, S. C.; Devlin, J. P. // Journal of Chemical Physics;8/1/1993, Vol. 99 Issue 3, p2265 

    Experimental Raman spectra are presented for the J=0→J=2 transition of para-H2 and for the J=1→J=3 transition of ortho-H2 adsorbed on the amorphous ice surface. Analysis of the spectra is based on a path integral Monte Carlo simulation of the H2 adsorbate-surface system. Rotational...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics