Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

Lin, C.-H.; Lee, M. H.; Liu, C. W.
January 2001
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p637
Academic Journal
Metal-oxide-silicon tunneling diodes with SiO[sub 2]/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.


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