TITLE

Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

AUTHOR(S)
Lin, C.-H.; Lee, M. H.; Liu, C. W.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p637
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-oxide-silicon tunneling diodes with SiO[sub 2]/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.
ACCESSION #
4711279

 

Related Articles

  • Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation. Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1397 

    The reliability of electroluminescence from metal-oxide-silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated...

  • Diffusion of hydrogen, deuterium, and tritium on the (110) plane of tungsten. Wang, S. C.; Gomer, R. // Journal of Chemical Physics;10/15/1985, Vol. 83 Issue 8, p4193 

    Diffusion coefficients for thermally activated and tunneling diffusion as well as mean square fluctuation data are presented for 1H, 2H, and 3H on W(110), as functions of coverage θ and temperature. If D is written as D0 e-E/kT for thermally activated diffusion, there are only small isotope...

  • Physical chemistry: Cool it, baby. Räsänen, Markku // Nature;6/12/2008, Vol. 453 Issue 7197, p862 

    The article focuses on the formation and detection of hydroxymethylene (HCOH). It cites that HCOH is one of the simplest members of a family of compounds known as carbenes. According to the article, the best evidence on the existence of HCOH came from studies of a light-induced reaction of...

  • Dipolar interaction in (NH[sub 3.6] D[sub 0.4] )[sub 2] PtCl[sub 6]. Prager, M.; Schiebel, P.; Grimm, H. // Applied Physics A: Materials Science & Processing;Dec2002 Supplement, Vol. 74 Issue 6, ps1363 

    At 10% deuteration ammonium hexachloroplatinate stays in its cubic phase Fm3m at all temperatures. Rotational tunneling of NH[sub 4] and NH[sub 3]D was measured by neutron spectroscopy. At temperatures T ≥ 18 K, energies and intensities of the observed tunneling transitions agree with a...

  • Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes. Weil, T.; Vinter, B. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1281 

    Resonant tunneling is known to lead to negative differential resistance in double-barrier diodes. Sequential tunneling has been proposed by S. Luryi [Appl. Phys. Lett. 47, 490 (1985)] as an alternative mechanism for the negative differential resistance observed. We show that the two...

  • Resonance-tunnel-transit diode with coherent tunneling as an oscillator in the submillimeter range. Gel’vich, É. A.; Golant, E. I.; Pashkovskiı, A. B.; Sazonov, V. P. // Technical Physics Letters;May99, Vol. 25 Issue 5, p382 

    This paper presents an improved method for designing a resonance-tunnel-transit diode that makes it possible to substantially increase its negative dynamic resistance.

  • Excess Noise Peaks in Porous Silicon-Based Diode Structures. Demidov, E. S.; Demidova, N. E.; Karzanov, V. V.; Shabanov, V. N. // JETP Letters;6/10/2002, Vol. 75 Issue 11, p556 

    Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single...

  • Improved design of AlAs/GaAs resonant tunneling diodes. Cheng, Peng; Harris, James S. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1676 

    We have investigated the effect of complex barrier structures in double-barrier resonant tunneling diodes (DBRTDs). The largest room-temperature peak-to-valley current ratios (PVCRs) to date have been observed for AlGaAs/GaAs DBRTDs. PVCRs as high as 5.1 were observed in AlAs/GaAs DBRTDs with an...

  • Electron-state lifetimes in submicron diameter resonant tunneling diodes. Tewordt, M.; Ritchie, D.A.; Syme, R.T.; Kelly, M.J.; Law, V.J.; Newbury, R.; Pepper, M.; Frost, J.E.F.; Jones, G.A.C.; Stobbs, W.M. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1966 

    Examines the electron-state lifetimes in submicron diameter resonant tunneling diodes. Investigation on the lifetimes of electron states in the quantum wells; Observation on the current-voltage characteristics; Explanation on the experimental lifetimes from transmission electron microscopy.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics