Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

Schneider, H. C.; Fischer, A. J.; Chow, W. W.; Klem, J. F.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3391
Academic Journal
We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current-density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.


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