Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Lee, Ching-Ting; Yu, Qing-Xuan; Tang, Bang-Tai; Lee, Hsin-Ying; Hwang, Fu-Tsai
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3412
Academic Journal
The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3x10[sup -4] Ω cm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer. © 2001 American Institute of Physics.


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