Suppression of phase separation in (AlAs)[sub 2 ML](InAs)[sub 2 ML] superlattices using Al[sub 0.48]In[sub 0.52]As monolayer insertions

Lee, S. R.; Reno, J. L.; Follstaedt, D. M.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3421
Academic Journal
Al[sub 0.48]In[sub 0.52]As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)[sub 2 ML](InAs)[sub 2 ML] short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al[sub 0.48]In[sub 0.52]As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs during molecular beam epitaxy of the SPS. The degree of suppression is a sensitive function of both the monolayer-scale thickness, and the intraperiod growth sequence, of the interlayers in the SPS. Given this sensitivity to monolayer-scale variations in the surface-region composition, we propose that cyclical phase transition of the reconstructed surface initiates SPS decomposition. © 2001 American Institute of Physics.


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