TITLE

Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well

AUTHOR(S)
Unuma, Takeya; Takahashi, Teruyuki; Noda, Takeshi; Yoshita, Masahiro; Sakaki, Hiroyuki; Baba, Motoyoshi; Akiyama, Hidefumi
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3448
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We experimentally and theoretically study the effects of interface roughness and phonon scattering on intersubband absorption linewidth in a modulation-doped GaAs/AlAs quantum well. Quantitative comparisons between experimental results and theoretical calculations make it clear that interface roughness scattering is the dominant scattering mechanism for absorption linewidth in the temperature range below 300 K. Even at room temperature, phonon scattering processes contribute little to linewidth, while polar-optical phonon scattering limits electron mobility. © 2001 American Institute of Physics.
ACCESSION #
4711239

 

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