Ballistic transport in a GaAs/Al[sub x]Ga[sub 1-x]As one-dimensional channel fabricated using an atomic force microscope

Curson, N. J.; Nemutudi, R.; Appleyard, N. J.; Pepper, M.; Ritchie, D. A.; Jones, G. A. C.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3466
Academic Journal
We fabricate a one-dimensional constriction in a shallow, δ-doped GaAs/Al[sub x]Ga[sub 1-x]As two-dimensional electron gas, by locally oxidizing the surface using an atomic force microscope. The channel exhibits ballistic conduction with up to seven conductance plateaus, quantized in units of 2e[sup 2]/h. The dependence of the device conductance on dc bias voltage reveals the energy separation of the first two subbands to be ΔE[sub 1,2]=5.5(±0.3) meV, which allows ballistic conduction to be observed up to a temperature of 20 K. A lateral electric field, combined with the hard-walled confinement due to the insulating lines, allows manipulation of the electron wave function in a way which is not possible with surface-gated devices. © 2001 American Institute of Physics.


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