TITLE

Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

AUTHOR(S)
Baldassarri H. v. H., G.; Bissiri, M.; Polimeni, A.; Capizzi, M.; Fischer, M.; Reinhardt, M.; Forchel, A.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3472
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of atomic hydrogen on the electronic properties of (InGa)(AsN)/GaAs single quantum wells (QWs) has been investigated by photoluminescence (PL) spectroscopy. For increasing hydrogen dose, the band gap of the material increases until it reaches the value corresponding to a N-free reference QW. The band gap variation is accompanied by an increase of the line width of the PL spectra and a decrease of the PL efficiency. Annealing at 500 °C fully recovers the band gap and PL line width the sample had before hydrogenation. These results are accounted for by the formation of N-H complexes, which lowers the effective nitrogen content in the well. © 2001 American Institute of Physics.
ACCESSION #
4711231

 

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