Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump-terahertz-probe experiments

Lui, K. P. H.; Hegmann, F. A.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3478
Academic Journal
We investigate the relaxation of photogenerated carriers in radiation-damaged silicon on sapphire using a collinear optical-pump-terahertz-probe arrangement. Carrier densities greater than 10[sup 20] cm[sup -3] are injected using 400 nm, 100 fs pump pulses, and the change in transmission of the terahertz-probe pulse is measured as a function of pump-probe delay. The time-dependent carrier density is deduced using a thin-film Drude model. A carrier mobility of 422±17 cm[sup 2]/V s is measured, and single-exponential carrier relaxation times of 4 ps at low fluence and 6 ps at high fluence are observed. © 2001 American Institute of Physics.


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