Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

Aqariden, F.; Shih, H. D.; Kinch, M. A.; Schaake, H. F.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3481
Academic Journal
A study of the electrical properties of p-type, low-arsenic-doped Hg[sub 1-x]Cd[sub x]Te (x∼0.3, carrier concentration ∼1x10[sup +15] cm[sup -3]) suitable for fabrication of high-operating-temperature photodetectors was carried out. The arsenic-doped HgCdTe samples were prepared by molecular beam epitaxy using an elemental arsenic source and were characterized by Hall measurements at 77 K after the samples were subjected to four different arsenic activation annealing schemes with annealing temperatures ranging from 300 to 450 °C. For comparison purpose, a sample doped to low-10[sup +16] cm[sup -3] was also prepared and subjected to the same annealing schemes. Although the four annealing schemes had little influence on the Hall data of the 10[sup +16] cm[sup -3] sample, they had significant impact on the Hall data of the 10[sup +15] cm[sup -3] sample. Furthermore, it was found that the Hall data could not be explained by any scattering mechanisms but could be satisfactorily modeled by a two-layer model in which an n-type skin layer is included. © 2001 American Institute of Physics.


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