Importance of random fields on the properties and ferroelectric phase stability of <001> oriented 0.7 Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]-0.3 PbTiO[sub 3] crystals

Viehland, D.; Powers, J.; Cross, L. E.; Li, J. F.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3508
Academic Journal
Temperature dependent dielectric constant measurements have been performed on <001> oriented 0.7 Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]-0.3 PbTiO[sub 3] crystals. These investigations have revealed an irreversible secondary transformation between a normal ferroelectric state and a relaxor ferroelectric state with increasing temperature. The results demonstrate that the anisotropy of the high performance piezocrystal state is only metastably locked in under application of field. Clearly, local random fields play a crucial role upon the ferroelectric phase stability and properties of <001> oriented piezocrystals. © 2001 American Institute of Physics.


Related Articles

  • Dynamic leakage current compensation in ferroelectric thin-film capacitor structures. Meyer, René; Waser, Rainer; Prume, Klaus; Schmitz, Torsten; Tiedke, Stephan // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p142907 

    We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the...

  • Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect. Chen Ge; Can Wang; Kui-juan Jin; Hui-bin Lu; Guo-zhen Yang // Nano-Micro Letters;2013, Vol. 5 Issue 2, p81 

    Switchable diode effect in ferroelectric diodes has attracted much attention for its potential applications in novel nonvolatile memories. We briefly review recent investigations on the switchable diode effect in ferroelectric diodes both experimentally and theoretically. Many recent studies...

  • Change in electromechanical properties of 0.9PMN:0.1PT relaxor ferroelectric induced by uniaxial... Zhao, J.; Glazounov, A.E.; Zhang, Q.M. // Applied Physics Letters;1/18/1999, Vol. 74 Issue 3, p436 

    Demonstrates that the uniaxial compressive stress applied perpendicular to the electric field changes the dielectric and electromechanical properties of the relaxor ferroelectric 0.9PMN:0.1PT at temperatures around its dielectric constant maximum T[sub m]. Effect of temperature shift on phase...

  • Quantitative mapping of switching behavior in piezoresponse force microscopy. Jesse, Stephen; Lee, Ho Nyung; Kalinin, Sergei V. // Review of Scientific Instruments;Jul2006, Vol. 77 Issue 7, p073702 

    The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is...

  • Effect of domain switching on kinking of a crack in a ferroelectric material. Beom, H.; Kang, K. // Acta Mechanica;Sep2006, Vol. 185 Issue 3/4, p201 

    Crack kinking induced by domain switching in a ferroelectric material under purely electric loading is investigated. Boundaries of domain switching zones for the asymptotic problem of a semi-infinite crack under the small scale conditions are determined based on the nonlinear electric theory....

  • VECTOR-VALUED OBSTACLE PROBLEMS FOR NON-LOCAL ENERGIES. Focardi, Matteo // Discrete & Continuous Dynamical Systems - Series B;Mar2012, Vol. 17 Issue 2, p487 

    We investigate the asymptotics of obstacle problems for non-local energies in a vector-valued setting. Motivations arise, in particular, in phase field models for ferroelectric materials and variational theories for dislocations.

  • Fast X-Band Phase Shifter. Yakovlev, V. P.; Nezhevenko, O. A.; Hirshfield, J. L. // AIP Conference Proceedings;2004, Vol. 737 Issue 1, p643 

    A phase shifter to be the key element of an active high-power switch is described. This phase shifter employs ultra-fast, electrically-controlled ferroelectric elements. This high-power switch will allow one to build an active Delay Line Distribution System (DLDS), which would provide...

  • Fast High-Power Microwave Ferroelectric Phase Shifters for Accelerator Application. Kazakov, S. Yu.; Shchelkunov, S. V.; Yakovlev, V. P.; Kanareykin, A.; Nenasheva, E.; Hirshfield, J. L.; Khabiboulline, Timergali; Hahn, H.; Choi, E. M. // AIP Conference Proceedings;1/22/2008, Vol. 1086 Issue 1, p477 

    Measurements are reported for a one-third version of a high-power L-band ferroelectric phase shifter. This phase shifter is designed to allow rapid adjustments of cavity coupling in an accelerator where RF source fluctuations, microphonics, or other uncontrolled fluctuations could cause...

  • Forming A Voltage-Tuned Microwave Phase Shifter.  // Microwaves & RF;Sep2008, Vol. 47 Issue 9, p122 

    The article focuses on the use of barium strontium titanate (BST) thin-film ferroelectric material to form phase shifters that can be tuned with applied voltage. It states that the material can create variable capacitors of voltage-controlled delay line because of its high capacitance density...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics