Low temperature synthesis and electrical properties of epitaxial Sr[sub 0.8]Bi[sub 2.2]Ta[sub 2]O[sub 9] thin films

Chattopadhyay, Soma; Kvit, A.; Kumar, D.; Sharma, A. K.; Sankar, J.; Narayan, J.; Knight, V. S.; Coleman, T. S.; Lee, C. B.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3514
Academic Journal
High quality epitaxial thin films of Sr[sub 0.8]Bi[sub 2.2]Ta[sub 2]O[sub 9] (SBT) were grown on LaNiO[sub 3] (LNO) bottom electrodes. The SBT/LNO heterostructure was fabricated on (001) oriented LaAlO[sub 3] substrates by pulsed laser ablation. X-ray diffraction and high resolution transmission electron microscopy revealed epitaxial growth of SBT and LNO layers along the (001) direction and sharp interfaces between the epilayers. The SBT films exhibited a dielectric constant of ∼270 and the loss tangent varied from 0.02 to 0.04. The dielectric constant measured as a function of bias field revealed that the films were not ferroelectric in nature. The room temperature frequency response of the dielectric constant was observed to obey Curie-von Schweidler power law with an exponent of 0.02 in the range of 10 kHz-1 MHz. © 2001 American Institute of Physics.


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