TITLE

Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

AUTHOR(S)
Yi, Woo-Chul; Kalkur, T. S.; Philofsky, Elliott; Kammerdiner, Lee; Rywak, Anthony A.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3517
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mg-doped Ba[sub 0.96]Ca[sub 0.04]Ti[sub 0.84]Zr[sub 0.16]O[sub 3] (BCTZ) thin films have been proposed as a promising material for microelectronic device applications based on high dielectric materials. Perovskite polycrystalline Mg-doped BCTZ thin films were fabricated on a Pt/Ti/SiO[sub 2]/Si substrate by metalorganic decomposition method. Dielectric properties were improved after a Pt/Mg-doped BCTZ thin film/Pt capacitor was post-annealed at 700 °C in O[sub 2] atmosphere for 30 min. A high dielectric constant of 460 at 1 MHz, a low dissipation factor less than 4.5%, and a low leakage current density of 4x10[sup -7] A/cm[sup 2] at 3 V were obtained. Improved dielectric properties were discussed in conjunction with reduction of oxygen vacancies and electrons due to the post-annealing and Mg dopants. © 2001 American Institute of Physics.
ACCESSION #
4711215

 

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