TITLE

High-density InP self-assembled quantum dots embedded in In[sub 0.5]Al[sub 0.5]P grown by metalorganic chemical vapor deposition

AUTHOR(S)
Ryou, J. H.; Dupuis, R. D.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3526
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe the characteristics of high-density InP self-assembled quantum dots embedded in In[sub 0.5]Al[sub 0.5]P cladding layers grown at 650 °C on GaAs (100) substrates by metalorganic chemical vapor deposition. Quantum dots grown with different deposition times are characterized by atomic force microscopy, photoluminescence, and transmission electron microscopy. For certain growth conditions, we observe the formation of a high density of quantum dots on the order of 10[sup 10] cm[sup -2]. The quantum dot average height increases from ∼5 to ∼25 nm with deposition time, while the quantum dot density changes insignificantly. Photoluminescence (4 K) shows a gradual shift of emission spectral peak from 2.06 eV (for 7.5 ML) to 1.82 eV (for 22.5 ML), corresponding to changes in the dominant quantum dot size. Also, incoherent quantum dot formation is not observed for up to 15 ML growth. © 2001 American Institute of Physics.
ACCESSION #
4711212

 

Related Articles

  • InP on Si(111): Accommodation of lattice mismatch and structural properties. Krost, A.; Heinrichsdorff, F.; Bimberg, D.; Cerva, H. // Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p769 

    Examines the growth of indium phosphide (InP) on vicinal silicon (Si) by chemical vapor deposition. Use of heterostructures for electronic devices; Comparison of defect sensitivity between InP and GaAs; Use of Si as a substrate for InP-based structures.

  • Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctions. Kane, M. J.; Anderson, D. A.; Taylor, L. L.; Bass, S. J. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p657 

    Presents information on a study which examined the electrical properties of a systematic series of indium phosphide modulation-doped heterostructures grown by metalorganic chemical vapor deposition. Description of the technique for modulation doping; Methodology of the study; Results and...

  • GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition. Mobarhan, K.; Jelen, C.; Kolev, E.; Razeghi, M. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p743 

    Reports on the growth of a GaInAsP/indium phosphide double heterostructure laser on a silicon substrate using low-pressure metalorganic chemical vapor deposition. Advantages offered by silicon; Room-temperature operation of GaInAsP double heterostructure; Cavity length dependence of the inverse...

  • Effects of As/P exchange reaction on the formation of InAs/InP quantum dots. Sukho Yoon; Youngboo Moon; Tae-Wan Lee; Euijoon Yoon; Young Dong Kim // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2029 

    Focuses on the growth of indium arsenide (InAs) self-assembled quantum dots (SAQD) on indium phosphide (InP) at various temperatures and V/III ratios by metalorganic chemical vapor deposition. Change of density, size distribution, and shape of the InAs SAQD; Analysis of the total deposition...

  • Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition. Zhang, X. B.; Ryou, J. H.; Dupuis, R. D.; Walter, G.; Holonyak, N. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p233105 

    We describe the growth of InP quantum structures on In0.5Al0.5P lattice-matched matrices deposited on (001) GaAs substrates using metalorganic chemical vapor deposition. We find that the deposited InP initially forms quantum wires, about 50 nm in width and a few nanometers in height. Further...

  • High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a.... Ban, V.S.; Rodefeld, D.; Flemish, J.R.; Jones, K.A. // Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p160 

    Presents a method for the epitaxial growth of indium phosphide heterostructures. Use of a combination of organometallic and hydride vapor phase epitaxy features; Coinjection of trimethylindium with hydrochloric acid into a hot-wall reactor; Characteristics of the fabricated materials.

  • Properties of Wide-Mesastripe InGaAsP/InP Lasers. Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskii, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Skrynnikov, G. A.; Tarasov, I. S.; Alferov, Zh. I. // Semiconductors;Jul2000, Vol. 34 Issue 7, p853 

    Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 �m were grown by metalorganic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range...

  • Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3-μm planar buried heterostructure lasers. Kawabata, T.; Ishiguro, H.; Koike, S. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3684 

    Reports on the metalorganic chemical vapor deposition of InGaAsP/indium phosphide layers and fabrication of 1.3-μm planar buried heterostructure lasers. Investigation of the selective burying growth of indium phosphide on several types of mesas; Significance of metalorganic chemical vapor...

  • Effects of thin GaAs insertion layer on InAs/(InGaAs)/InP(001) quantum dots grown by metalorganic chemical vapor deposition. Kwangmin Park; Pilkyung Moon; Eungjin Ahn; Sukwon Hong; Euijoon Yoon; Jeong Won Yoon; Hyeonsik Cheong; Leburton, Jean-Pierre // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223110 

    We studied the influence of a thin GaAs insertion layer (5–10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics