TITLE

300 K operation of a GaAs-based quantum-cascade laser at λapprox. 9 μm

AUTHOR(S)
Page, H.; Becker, C.; Robertson, A.; Glastre, G.; Ortiz, V.; Sirtori, C.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3529
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The room-temperature (300 K), pulsed mode operation of a GaAs-based quantum-cascade laser is presented. This has been achieved by the use of a GaAs/Al[sub 0.45]Ga[sub 0.55]As heterostructure which offers the maximum Γ-Γ band offset (390 meV) for this material system without inducing the presence of indirect barrier states. Thus, better electron confinement is achieved, countering the loss of injection efficiency with temperature. These devices show ∼100 K increase in operating temperature with respect to equivalent designs using an GaAs/Al[sub 0.33]Ga[sub 0.67]As heterostructure. We also measure 600 mW peak power at 233 K a temperature readily accessible by Peltier coolers. © 2001 American Institute of Physics.
ACCESSION #
4711211

 

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