Organic metal-semiconductor field-effect phototransistors

Scho¨n, Jan Hendrik; Kloc, Christian
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3538
Academic Journal
We have prepared phototransistors based on bromine-doped pentacene. Such devices reveal light detection over a wide energy range with amplification. The illumination modifies the charge characteristics of the Schottky gate of an enhancement-mode the metal-semiconductor field-effect transistor leading to transistor amplification of the photodiode-like response. A gain of 8 is obtained for illumination at 632 nm. These phototransistors combine the excellent properties of pentacene field-effect transistors and photovoltaic devices. © 2001 American Institute of Physics.


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