Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

Ballarotto, V. W.; Siegrist, K.; Phaneuf, R. J.; Williams, E. D.; Yang, W.-C.; Nemanich, R. J.
May 2001
Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3547
Academic Journal
We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states. © 2001 American Institute of Physics.


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