Dielectric transition of nanostructured diamond films

Ye, Haitao; Sun, Chang Q.; Huang, Haitao; Hing, Peter
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1826
Academic Journal
The dielectric behavior of nanostructured diamond films has been investigated by using an impedance analyzer up to 500 °C. Impedance data are presented in the form of the Cole-Cole plot. It is found that: (i) the resistivity contributed both from bulk grain interior and grain boundary decreases with increasing temperature; (ii) above 250 °C, the impurities at grain boundaries are thermally activated, and thus contribute to the dielectric relaxation; and (iii) the electrical conductivity of diamond films follows an Arrhenius law with an activation energy transition from 0.13 to 0.67 eV at 250 °C. Similar activation energy is found for the Arrhenius plot of relaxation frequencies from 0.14 to 0.73 eV. The dielectric transition is explained as the change of crystal field caused by the thermal expansion or by surface bond contraction of nanosized particles. © 2001 American Institute of Physics.


Related Articles

  • Optical properties of bulk AlGaAs. Zheng, Jun; Lin, Chih-Hsiang // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p792 

    Presents an analytical semiempirical model for the dielectric function epsilon (E)=epsilon1(E)+iepsilon2(E) of bulk AlGaAs. Calculation of the imaginary part of the dielectric function; Indirect-gap transitions; Comparisons with experimental data.

  • DC field dependent properties of Na[sub 0.5]K[sub 0.5]NbO[sub 3]/SiO[sub 2]/Si structures at millimeter-wave frequencies. Abadei, S.; Gevorgian, S.; Cho, C.-R.; Grishin, A.; Andreasson, J.; Lindba¨ck, T. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1900 

    Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na[sub 0.5]K[sub 0.5]NbO[sub 3] films on high-resistivity (7.7 Ω cm) silicon SiO[sub 2]/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes...

  • Frequency response of microwave dielectric ... thin films laser deposited on... Cheng, Hsiu-Fung; Chen, Yi-Chun // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p479 

    Deals with a study that examined the characteristics of microwave dielectric thin films prepared by the pulsed laser deposition technique. Advantages of microwave dielectric thin films over bulk materials; Morphology of the surface and the cross section and thickness of the films; Results of...

  • High permittivity thin film nanolaminates. Zhang, H.; Solanki, R. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1921 

    Presents information on a study which characterized the thin film nanolaminates for gate dielectric applications. Electrical properties of thin film nanolaminates; Experimental details; Results and discussion; Conclusions.

  • Effect of interfacial layers on dielectric properties in very thin SrBi[sub 2]Ta[sub 2]O[sub 9] capacitors. Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6557 

    The effect of interfacial layers on the dielectric properties in very thin SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) capacitors has been investigated using static measurements. Total permittivity (ε[sub t]) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The...

  • Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties. Liao, Meiyong; Gotoh, Yasuhito; Tsuji, Hiroshi; Nakajima, Kiyomi; Imura, Masataka; Koide, Yasuo // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p024101 

    The combination of piezoelectric materials and single crystal diamond offers the opportunity for the development of multifunctional micromachined devices under extreme conditions. In this work, the authors report the structural, electrical, optical, and dielectric properties of...

  • Determination of the nanoscale dielectric constant by means of a double pass method using electrostatic force microscopy. Riedel, C.; Arinero, R.; Tordjeman, Ph.; Ramonda, M.; Lévêque, G.; Schwartz, G. A.; Oteyza, D. G. de; Alegria, A.; Colmenero, J. // Journal of Applied Physics;Jul2009, Vol. 106 Issue 2, p024315-1 

    We present a method to determine the local dielectric permittivity of thin insulating layers. The measurement is based on the detection of force gradients in electric force microscopy by means of a double pass method. The proposed experimental protocol is simple to implement and does not need...

  • Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO[sub 3] capacitors: Evidence of an interfacial space charge layer. Pontes, F. M.; Pontes, F.M.; Leite, E. R.; Leite, E.R.; Longo, E.; Varela, J. A.; Varela, J.A.; Araujo, E. B.; Araujo, E.B.; Eiras, J. A.; Eiras, J.A. // Applied Physics Letters;4/24/2000, Vol. 76 Issue 17 

    The dielectric properties of (Ba, Sr)TiO[sub 3] films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere...

  • Thickness dependence of dielectric loss in SrTiO[sub 3] thin films. Li, Hong-Cheng; Si, Weidong; West, Alexander D.; Xi, X. X. // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    We have measured the dielectric loss in SrTiO[sub 3] thin films grown on SrRuO[sub 3] electrode layers with thickness ranging from 25 nm to 2.5 μm. The loss depends strongly on the thickness but differently above and below Tapprox. 80 K: as the thickness increases, the loss decreases at high...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics