Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

Kasu, Makoto; Kobayashi, Naoki
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1835
Academic Journal
Sharp ridge structures with a 3 nm wide (0001) top facet and {11¯01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth. This is caused by {11¯01} facet growth induced by heavy Si doping. We obtained a large field emission (FE) current density of 11 mA/cm2 at 84 V/μm. One of the reasons for the large FE is that the ridge-structure formation decreases the energy barrier necessary for FE by about 2.4 eV. © 2001 American Institute of Physics.


Related Articles

  • The role of Si as surfactant and donor in molecular-beam epitaxy of AlN. Lebedev, V.; Morales, F. M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p093508 

    The growth of Si-doped AlN(0001) thin films on Al2O3(0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the...

  • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy. Helman, A.; Tchernycheva, M.; Lusson, A.; Warde, E.; Julien, F.H.; Moumanis, Kh.; Fishman, G.; Monroy, E.; Daudin, B.; Le Si Dang, D.; Bellet-Amalric, E.; Jalabert, D. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5196 

    We report experimental and theoretical results on interband and intersubband transitions in GaN quantum wells with strained AlN barriers. All of the samples are grown by molecular-beam epitaxy on sapphire (0001) substrates. The results show that even at room temperature, strong electron...

  • Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy? Ganz, P. R.; Schaadt, D. M. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p691 

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to...

  • Green emission from c-axis oriented AlN nanorods doped with Tb. Liu, Q.L.; Tanaka, T.; Hu, J.Q.; Xu, F.F.; Sekiguchi, T. // Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4939 

    Green emission has been obtained from c-axis oriented aluminum nitride (AlN) nanorods doped with terbium (Tb) on silicon (111). The nanorods were prepared by reactive radio-frequency magnetron sputtering in argon and nitrogen atmosphere using a target of Al and TbN mixtures, and characterized by...

  • Epitaxial growth of AlN and Al[sub 0.5]Ga[sub 0.5]N layers on aluminum nitride substrates. Schowalter, L. J.; Schowalter, L.J.; Shusterman, Y.; Wang, R.; Bhat, I.; Arunmozhi, G.; Slack, G. A.; Slack, G.A. // Applied Physics Letters;2/21/2000, Vol. 76 Issue 8 

    High quality epitaxial AlN and Al[sub x]Ga[sub 1-x]N layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy,...

  • On the epitaxy of aluminum nitride on silicon substrates in a chloride–hydride process. Efimov, A. N.; Lebedev, A. O.; Tsaregorodtsev, A. M. // Technical Physics Letters;Oct98, Vol. 24 Issue 10, p810 

    The technological conditions under which the silicon surface interacts with vapor-phase reactants present in a chloride-hydride system for the epitaxial growth of aluminum nitride are determined. The method of electron channeling patterns is used to show that the growth of single-crystal layers...

  • Emission properties of an amorphous AlN:Cr[sup 3+] thin-film phosphor. Caldwell, M. L.; Martin, A. L.; Dimitrova, V. I.; Van Patten, P. G.; Kordesch, M. E.; Richardson, H. H. // Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1246 

    Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10[sup -4] Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ∼1300 K for 30 min in a nitrogen...

  • Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN. Gruber, John B.; Vetter, Ulrich; Taniguchi, Takashi; Burdick, Gary W.; Hofsäss, Hans; Chandra, Sreerenjini; Sardar, Dhiraj K. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p023104 

    A detailed spectroscopic analysis of the crystal-field splitting of the energy levels of Eu3+(4f6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments made to the high-resolution cathodoluminescence spectra observed between 500 nm and 750 nm obtained at 11 K...

  • Planar avalanche photodiode with a low-doped, reduced curvature junction. Chi, G. C.; Muehlner, D. J.; Ostermayer, F. W.; Freund, J. M.; Pawelek, R.; McCoy, R. J.; Peticolas, L. J.; Mattera, V. D. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1158 

    A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics