TITLE

Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

AUTHOR(S)
Kasu, Makoto; Kobayashi, Naoki
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1835
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sharp ridge structures with a 3 nm wide (0001) top facet and {11¯01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth. This is caused by {11¯01} facet growth induced by heavy Si doping. We obtained a large field emission (FE) current density of 11 mA/cm2 at 84 V/μm. One of the reasons for the large FE is that the ridge-structure formation decreases the energy barrier necessary for FE by about 2.4 eV. © 2001 American Institute of Physics.
ACCESSION #
4711190

 

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