In situ analysis of the room-temperature epitaxial growth of CeO[sub 2] ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

Furusawa, M.; Tashiro, J.; Sasaki, A.; Nakajima, K.; Takakura, M.; Chikyow, T.; Ahmet, P.; Yoshimoto, M.
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1838
Academic Journal
The room-temperature epitaxial growth of CeO[sub 2] films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO[sub 2] ultrathin films (∼3 nm thick) as-grown in UHV (∼10[sup -9] Torr) could be improved remarkably by a few minutes of O[sub 2] gas exposure (∼10[sup -5] Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1¯10][sub CeO[sub 2]]|[11¯0][sub Si]), was observed for the films thicker than about 1 nm. © 2001 American Institute of Physics.


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