TITLE

Formation of the TiSi[sub 2] C40 as an intermediate phase during the reaction of the Si/Ta/Ti system

AUTHOR(S)
La Via, F.; Mammoliti, F.; Corallo, G.; Grimaldi, M. G.; Migas, D. B.; Miglio, Leo
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1864
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi[sub 2] C40. This phase grows on the C40-TaSi[sub 2] that is formed at the interface with silicon. The lattice parameters of the C40-TiSi[sub 2] obtained by ab initio calculations agree quite well with the experimental ones. © 2001 American Institute of Physics.
ACCESSION #
4711180

 

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