TITLE

Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

AUTHOR(S)
Cheng, Kangguo; Lee, Jinju; Hess, Karl; Lyding, Joseph W.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1882
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method based on the hydrogen/deuterium isotope effect is proposed to separate and quantify the effects of interface trap creation and oxide charge trapping on hot-carrier-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). Hydrogenated and deuterated transistors were subjected to hot-carrier stress with a fixed drain voltage V[sub ds] and various gate voltages V[sub gs]. The threshold voltage V[sub t] and interface trap density N[sub it] were recorded as a function of stress time. It is found that at low V[sub gs] stress when equal numbers of interface traps are created, the shift of V[sub t] is larger in hydrogenated transistors than in deuterated transistors. Increasing V[sub gs] to 1/3V[sub ds] produces no noticeable difference of V[sub t] shift in these two kinds of transistors. However, further increasing V[sub gs] results in larger V[sub t] shift in deuterated transistors than in hydrogenated ones. From a quantitative analysis, the contribution of oxide charge trapping to V[sub t] shift is separated from the contribution of interface trap creation. The results suggest that interface trap creation is the dominant mechanism for hot-carrier-induced degradation in n-channel MOSFETs. © 2001 American Institute of Physics.
ACCESSION #
4711172

 

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