DC field dependent properties of Na[sub 0.5]K[sub 0.5]NbO[sub 3]/SiO[sub 2]/Si structures at millimeter-wave frequencies

Abadei, S.; Gevorgian, S.; Cho, C.-R.; Grishin, A.; Andreasson, J.; Lindba¨ck, T.
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1900
Academic Journal
Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na[sub 0.5]K[sub 0.5]NbO[sub 3] films on high-resistivity (7.7 Ω cm) silicon SiO[sub 2]/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na[sub 0.5]K[sub 0.5]NbO[sub 3] films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices. © 2001 American Institute of Physics.


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