Large remanent polarization of vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12]

Noguchi, Yuji; Miyayama, Masaru
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1903
Academic Journal
Effects of vanadium doping on the ferroelectric properties of Bi[sub 4]Ti[sub 3]O[sub 12] were investigated using dense ceramics. The incorporation of vanadium resulted in a large remanent polarization (2P[sub r]) of over 40 μC/cm[sup 2] without sacrificing other physical properties, and the polarization characteristics were shown to be superior to SrBi[sub 2]Ta[sub 2]O[sub 9] and Sr[sub 0.8]Bi[sub 2.2]Ta[sub 2]O[sub 9]. In addition, dense ceramics of vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12] could be obtained by sintering at temperatures 100-200 °C lower than those for the SrBi[sub 2]Ta[sub 2]O[sub 9] system. © 2001 American Institute of Physics.


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