Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications

Stonas, A. R.; Margalith, T.; DenBaars, S. P.; Coldren, L. A.; Hu, E. L.
March 2001
Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1945
Academic Journal
The authors have developed a wet band gap-selective photoelectrochemical etching process to produce deep undercuts (∼500 μm) into InGaN/GaN heterostructures. These undercuts were used in a lift-off process which successfully transferred device-scale (100 μm diameter, 5 μm thick) disks from their underlying sapphire substrates to another substrate. Experiments were conducted using a lamp-and-filter arrangement, employing n-type and p-type GaN pieces as filters. Polishing was conducted to smooth the resulting substrate-transferred GaN disks. © 2001 American Institute of Physics.


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