Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

Jeong, Weon G.; Dapkus, P. Daniel; Lee, U. H.; Yim, J. S.; Lee, D.; Lee, B. T.
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1171
Academic Journal
Five stacks of InAs quantum dots (QDs) with InGaAsP barriers were grown on (100) InP and luminescence characteristics were analyzed. Cross-sectional transmission electron microscopy shows that small dots with a lateral size of ∼30 nm and a height of ∼3 nm are formed with an areal density of ∼5x10[sup 10] cm[sup -2]. The QDs emit strong photoluminescence (PL) peaks in the range of 1.4-1.6 μm that can be controlled by nominal InAs thickness. The integrated PL intensity from QDs stays very high at room temperature as much as 20% of that at 10 K. At weak excitation, the carrier lifetimes are measured to be almost the same across the whole PL band at low temperature with a value of ∼4 ns and they remain at that value at room temperature. These characteristics strongly evidence that individual QDs are well isolated and have a strong carrier confinement at room temperature. © 2001 American Institute of Physics.


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