Thermal resistance and temperature characteristics of GaAs/Al[sub 0.33]Ga[sub 0.67]As quantum-cascade lasers

Spagnolo, Vincenzo; Troccoli, Mariano; Scamarcio, Gaetano; Becker, Cyrille; Glastre, Genevieve; Sirtori, Carlo
February 2001
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1177
Academic Journal
We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al[sub 0.33]Ga[sub 0.67]As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported. © 2001 American Institute of Physics.


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