TITLE

Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameter

AUTHOR(S)
Schilling, J.; Mu¨ller, F.; Matthias, S.; Wehrspohn, R. B.; Go¨sele, U.; Busch, K.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1180
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the fabrication and optical characterization of a three-dimensional (3D) photonic crystal on the basis of macroporous silicon. The structure consists of a 2D array of air pores in silicon whose diameter is varied (modulated) periodically with depth. The bandstructure of the resulting 3D hexagonal photonic crystal is calculated and compared with transmission measurements. The described structure allows to adjust the dispersion relation along the pore axis almost independently from the dispersion relation in the plane perpendicular to the pore axis. © 2001 American Institute of Physics.
ACCESSION #
4711146

 

Related Articles

  • Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation. Perevoshchikov, V. A.; Skupov, V. D. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p315 

    Experimemal data on the dissolution of microdefects in the near-surface regions of silicon single crystals during the electrochemical formation of porous silicon layers followed by argonion irradiation are presented. A decrease in the microdefect concentration is detected near the interface with...

  • Microstructure of porous silicon. Nakajima, A.; Ohshima, Y.; Itakura, T.; Goto, Y. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2631 

    Examines the microstructure of porous silicon (Si). Distribution of Si microcrystals throughout the porous Si; Application of photoluminescence from porous Si in Si-based optoelectronics; Observation of particlelike Si structure by scanning electron microscopy.

  • Photosensitivity of porous silicon-silicon heterostructures. Astrova, E. V.; Lebedev, A. A.; Remenyuk, A. D.; Rud’, Yu. V.; Rud’, V. Yu. // Semiconductors;Feb97, Vol. 31 Issue 2, p121 

    Data from experimental studies of the photoelectric properties of heterostructures of porous and single-crystal silicon are presented. Rectifying heterostructures with photosensitivities of up to 1 mA/W at 300 K in the spectral range 1.2-2.3 eV are obtained. Oscillations in the photocurrent due...

  • Microluminescence depth profiles and annealing effects in porous silicon. Prokes, S.M.; Freitas Jr., J.A. // Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3295 

    Examines the effects of annealing and microluminescence depth profiles in porous silicon. Absence of spectral shift; Independence of depth from luminescence spectra redshift; Influence of annealing temperature on luminescence redshift; Role of hydrogen in optical band shrinkage.

  • Anomalous photoluminescence behavior of porous Si. Stevens, P.D.; Glosser, R. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p803 

    Investigates the photoluminescence behavior of porous silicon etched with high acid concentrations. Mechanism for increasing photoluminescence intensity; Degradation of photoluminescence intensity at higher point density; Excitation of metastable states within the band structure of porous silicon.

  • Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration. Tanaka, Satoshi; Koyama, Hideki; Koshida, Nobuyoshi // Applied Physics Letters;10/19/1998, Vol. 73 Issue 16 

    We have measured the photoluminescence (PL) decay properties of porous silicon (PS) samples subjected to ion irradiation up to a dose of 10[sup 15] cm[sup -2] at 30 kV. It is found that while the PL intensity decreases down to 1/100 of the initial value due to induced nonradiative...

  • Optical properties of porous silicon superlattices. Vincent, G. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2367 

    Examines the optical properties of porous silicon superlattices obtained by electrolysis. Process for modulating the current during the fabrication process; Silicon superlattices as multilayer dielectric device; Determination of optical reflection coefficient of silicon superlattices.

  • Photoluminescence and its decay of the dye/porous-silicon composite system. Li, Peng; Li, Qingshan // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p490 

    Studies the photoluminescence (PL) and its decay in the composite system of dye/porous silicon, consisting of oxidized porous silicion (PSi) and impregnated dyes. Preparation of the PSi samples; Spectra of Rh B in different states.

  • Laser-induced thermal effects on the optical properties of free-standing porous silicon films. Koyama, Hideki; Fauchet, Philippe M. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1788 

    Presents a study which investigated laser-induced thermal effects on the optical properties of free-standing porous silicon films. Experimental details; Methodology used; Evaluation of the temperature rise.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics